¡Vaporizer
It is necessary to select the vaporizer for the conditions to vaporize the liquid caractoristic, the pressure situation and the flow rate.
We have those vaporizers and many experience for liquid vaporize unit. Plese be attention, our vaporizer must be used with our liquid mass flow meter.
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Vaporize unit VU Series
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VU-206 |
Vaporization system for LPCVD and APCVD |
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¡Features
Precise flow rate control and efficient vaporization of liquids (TEOS, TEB, TEPO, etc.) when used in combination with the LM-2102P, LM-2202P and LM-3102E liquid mass flow meters.
Applicable to vacuum process and atmospheric process.
Maximum operating temperature of 160‹C.
Piezo control valve provides fast and precise control.
Compact body size.
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¡Applications
For BPSG film
Flow rate control and vaporization when used in combination with Liquid mass flow meter.
7g/min(TEOS equivalent) |
| >>Catalog Data (298kB) |
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VU-430A |
Vaporization system for LPCVD and APCVD |
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¡Features Precise flow rate control and efficient vaporization of a wide variety of liquids when used in combination with the LM-2100A liquid mass flow meter (US PAT. 5372754).
Applicable not only to vacuum but also atmospheric processes.
Maximum operating temperature of 200‹C.
WCompact body size (compatible with VU-410/420).
Wide range of carrier gas flow rates (50SCCM-4SLM). (50SCCM`4SLM) |
¡Applications
Liquid supply and vaporize unit for H2O or etc.
Flow rate control and vaporization when used in combination with Liquid mass flow meter.
10g/min(TEOS equivalent) |
| >>Catalog Data (287kB) |
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VU-450 |
Vaporization system
for LPCVD and APCVD |
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¡Features
Precise flow rate control and efficient vaporization of a wide variety of liquids when used in combination with the LM-2100A liquid mass flow meter (US PAT. 5372754).
Atmospheric vaporization and supply of pure water.
Wide range of carrier gas flow rates (1SLM-100SLM)
Maximum operating temperature of 200‹C
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¡Applications
Liquid supply and vaporize unit for H2O or etc.
Flow rate control and vaporization when used in combination with Liquid mass flow meter.
7g/min(H2O) |
| >>Catalog Data (332kB) |
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VU-D450/T450 |
Premix vaporization unit |
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¡Features
Premix vaporization technology (patent pending).
Precise flow rate control and premixing of up to 3 precursors using LM-2100A liquid mass flow meters.
Simultaneous vaporization in one vaporizer chamber.
Space savings and lower cost of ownership.
Atmospheric and vacuum process capabilities.
Wide carrier gas flow range (800SCCM-130SLM). (800SCCM`130SLM)
Maximum operating temperature of 200‹C.
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¡Applications
Flow rate control and vaporization when used in combination with Liquid mass flow meter.
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| >>Catalog Data (342kB) |
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VU-550 Series |
Premix vaporization unit for high temperature |
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¡Features
Premix vaporization technology (patent pending).
Precise flow rate control and premixing of up to 4 precursors using LM-2100A liquid mass flow meters.
Simultaneous vaporization in one vaporizer chamber.
Space savings and lower cost of ownership.
Atmospheric and vacuum process capabilities.
Wide carrier gas flow range (800SCCM-130SLM). (800SCCM`130SLM)
Maximum operating temperature of 300‹C.
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¡Applications
Liquid supply and vaporize unit for the ferroelectrics film(PZT,BST,etc)
Flow rate control and vaporization when used in combination with Liquid mass flow meter.
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| >>Catalog Data (273kB) |
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¡CVD Materials and LINTEC Vaporization Technology
| Categories |
Applications |
Thin Films |
Materials |
Vaporizers |
| Dielectrics |
Passivation, Capacitors |
USG,NSG (SiO2) |
TEOS |
VU-206,VU-430,VU-450
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| PSG,BSG,BPSG |
TEOS,TEB,TEPO |
| Low-K Film |
Organic inslating film |
DVS-BCB |
VU-450 |
| Hydrogen content SiO2 |
HMDSO,TMDSO,OMTSO,OMCTS,TMCTS |
VU-450 |
High-K Film (Ferroelectrics) |
Ta2O5 |
Ta(OC2H5)5 |
VU-430,VU-450 |
| BST(BaSrTiOx) |
Ba(THD)2,Sr(THD)2,Ti(iPrO)2(THD)2 |
VU-550 |
| HfO2,HfSiON |
HTB,Hf'MMP)4,TDMAH,TEMAH,TDEAH |
VU-430,VU-450 |
| AL2O3 |
Al(MMP)3,TMA |
VU-430,VU-450 |
| ZrO2 |
Zr(MMP)4,Zr(Ot-Bu)4 |
VU-550 |
| High-K Film |
PZT(PbZrTiOx) |
Pb(METHD)2,Zr(MMP)4,Ti(THD)2(OiPr) |
VU-550 |
| PLZT(PbLaZrTiOx) |
Pb(METHD)2,Zr(MMP)4,Ti(THD)2(OiPr),La(EDMDD)3 |
| SBT(SrBiTaOx) |
Sr[Ta(OEt)5(OEtOMe)]2,BiMMP |
| BIT |
Bi(MMP)3,Ti(MMP)4,Si(MMP)4 |
| Metal Films |
High melting point metallic film |
Ti |
TiCl4 |
VU-430,VU-450 |
| Ir/IrO2 |
Ir(ND)3 |
VU-550 |
| Metal silicide film |
TiSi2 |
Ti(OC3H7)4 |
VU-450 |
| Electroconductive nitride film |
TiN |
TiCl4 |
VU-430,VU-450 |
| TDMAT,TDEAT |
VU-550 |
| TaN |
TBTDET |
VU-550 |
| Cu Film |
Cu |
Cu(hfac)tmvs |
VU-450 |
| Cu(EDMDD)2 |
VU-450 |
| Barrier Metals |
Ru |
Ru(EtCp)2,Ru(OD)3 |
VU-450 |
| TiN |
Ti(OC3H7)4 |
VU-450 |
| Electrodes |
Ru,Ru2O |
Ru(EtCp)2,Ru(OD)3 |
VU450 |
| LCD |
‚s‚e‚s@Gate Capasitance |
SiO2 |
TEOS |
VU-206,VU-430,VU-450 |
| ITO(InSnOx) |
In(C5H7O2)3,Sn(C4H9)4 |
VU-450 |
| Inter-layer Dielectrics |
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